Excess generation-recombination noise in reverse biased Schottky-barrier diodes

Generation-recombination noise in reverse biased Schottky-barrier diodes (made on high resistivity n-type silicon) has been investigated theoretically and experimentally. It is shown that in the considered type of diodes generation-recombination noise can be larger than predicted by the common limit I_eq I_g-r. The measured spectral noise distribution is in good agreement with the theoretical predictions.