Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP |
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| Authors: | LIN Yuhan HUANG Ye ZHU Qianpeng ZHANG Genggeng and HU Juntao |
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| Affiliation: | National Engineering Lab of Special Display Technology,State Key Lab of Advanced Display Technology,Academy of Opto-Electronic Technology,Hefei University of Technology,Hefei 230009,China;School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China;National Engineering Lab of Special Display Technology,State Key Lab of Advanced Display Technology,Academy of Opto-Electronic Technology,Hefei University of Technology,Hefei 230009,China;School of Instrument Science and Opto-electronics Engineering,Hefei University of Technology,Hefei 230009,China;National Engineering Lab of Special Display Technology,State Key Lab of Advanced Display Technology,Academy of Opto-Electronic Technology,Hefei University of Technology,Hefei 230009,China |
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| Abstract: | The poor film formation of CdSe/ZnS quantum dots (QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes (QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer (EML) by adding small organic molecular 4,4''-Bis(9H-carbazol-9-yl) biphenyl (CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer (HTL) and EML. Consequently, the CdSe/ZnS QDs:CBP based QLED achieves maximum external quantum efficiency (EQE) of 5.86%, and maximum brightness of 10 363 cd/m2. It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs. |
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