Rapid isothermal processing of Pt/Ti contacts to p-type III-Vbinary and related ternary materials |
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| Authors: | Katz A. Chu S.N.G. Weir B.E. Abernathy C.R. Hobson W.S. Pearton S.J. Savin W. |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | Results of an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given. Pt/Ti contact to InAs and In0.53 Ga0.47As were ohmic as deposited, while the same metallization scheme on GaAs, GaP, InP, In0.52Al0.48 As, and Ga0.7Al0.3As provided a rectifying contact as-deposited. The latter group of contacts, with the exception of InP and GaP, were transformed to an ohmic contact as a result of rapid thermal processing (RTP) at the temperature range of 300 to 450°C. A linear correlation between the semiconductor bandgap value and the Schottky-barrier height, measured in the Pt/Ti contacts, was observed |
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