A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise Analyze |
| |
| Authors: | Xiaonan Yang Zongyong Wang |
| |
| Affiliation: | 1. School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China;2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| |
| Abstract: | The impact of program/erase (P/E) cycling on drain disturb in 65 nm-node NOR flash memories is studied. It is shown that the drain disturb is originated from the hot-hole-injection (HHI) induced by band-to-band tunneling (BBT) when programming operation. The drain disturb becomes more severe as cycles increase due to the negative traps and interface generated during cycling in the tunneling oxide. The 1/f noise before and after drain disturb for fresh and cycled cells are investigated to support the conclusions. |
| |
| Keywords: | NOR flash drain disturb P/E cycling 1/f noise |
|
