Structural and Electrical Properties of Ba(ZrxTi1-x)O3 Films Prepared by RF-magnetron Sputtering Using Metal Targets |
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| Authors: | Jin Woong Kim Hiromi Shima Hiroshi Funakubo Ken Nishida Takashi Yamamoto |
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| Affiliation: | 1. Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japankimjwaf001@yahoo.co.jp;3. Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;4. Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan |
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| Abstract: | Ba(ZrxTi1-x)O3 (BZT) thin films with different Zr contents were deposited on (100)MgO and (100)Pt/(100)MgO substrates by RF-magnetron sputtering using metal targets. The BZT thin films had a single perovskite phase with only (001)/(100) orientation. In all cases, the ratio of Ba/Ti was stoichiometry and BZT films possess a dense microstructure. The grain size was decreased and BZT thin films showed ferroelectric-to-paraelectric properties with increasing Zr content. At room temperature, the tunability of nearly 30% was achieved at 1 MHz; meanwhile, a relatively low dielectric loss was obtained. These results indicated that we succeeded in depositing high-quality and potential tunable ferroelectrics. |
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| Keywords: | BZT films reactive sputtering metal targets grain size tunability |
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