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Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor |
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| Authors: | Mitchell R Hunt Rana Sayyah Cody Mitchell Crystal L McCartney Todd C Macleod |
| Affiliation: | 1. The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA;2. National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, USA |
| Abstract: | Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed in this paper. The models are compared against data collected with MFSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth. |
| Keywords: | MFSFET MFFET metal-ferroelectric-semiconductor field effect transistor FeFET FFET ferroelectric transistor common-source amplifier common-gate amplifier |