Empirical Data of the Metal-Ferroelectric-Semiconductor Field Effect Transistor Polarization and Channel Resistance for Timing and Retention Analysis |
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Authors: | Mitchell R. Hunt Crystal L. McCartney Cody Mitchell Joseph Evans |
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Affiliation: | 1. The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA;2. Radiant Technologies, Inc., Albuquerque, New Mexico, 87107, USA |
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Abstract: | In this paper, empirical data describing the channel resistance and polarization of several metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) is presented. Various channel length and width transistors were used to describe the channel resistance under various biasing conditions and in both positive and negative polarization states. The presented results and analysis provide insight into the switching speed between polarization states as well as the timing and retention constraints for a given set of device dimensions. This is of particular value when considering circuit designs that utilize MFSFETs, especially digital memory circuits. |
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Keywords: | MFSFET MFFET metal-ferroelectric-semiconductor field effect transistor FeFET FFET ferroelectric transistor polarization capacitance channel resistance switching |
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