Microstructures and thermal conductivities of reaction sintered SiC ceramics

Abstract

Reaction sintered SiC ceramics were prepared by the silicon melt infiltration method over temperatures of 1450?1550°C. The effects of the carbon and silicon contents of the starting materials as well as the sintering temperature and time on the thermal conductivities and microstructures of the ceramic materials were studied. The thermal conductivities and microstructures of the samples were characterised using thermal conductivity measurements, X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy and mercury injection porosimetry. The results showed that sintering temperature and time as well as the carbon and silicon contents of the green specimens are the main factors affecting the microstructure and porosity of reaction bonded SiC ceramics. Increasing the reaction temperature and time decreased the porosity of the ceramics. This was due to the infiltration of the silicon melt into the ceramic specimens. The thermal conductivity and porosity of the sample sintered at 1550°C for 3 h in an argon atmosphere were 102·5 W m K^?1 and 0·3% respectively.