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Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor |
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| Authors: | Mitchell R Hunt Rana Sayyah Cody Mitchell Crystal L McCartney Todd C Macleod |
| Affiliation: | 1. The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA;2. National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, USA |
| Abstract: | Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and additional device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation of load, quiescent point, or input signal on each circuit are shown. Advantages and applications of the MFSFET and the circuit performance are discussed. |
| Keywords: | MFSFET MFFET metal-ferroelectric-semiconductor field effect transistor FeFET FFET ferroelectric transistor common-source amplifier common-gate amplifier |