| 一种无电感超宽带低噪声放大器的设计 |
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| 引用本文： | 黄毅文,张万荣,谢红云,沈珮,黄璐,胡宁.一种无电感超宽带低噪声放大器的设计[J].微电子学,2009,39(6). |
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| 作者姓名： | 黄毅文 张万荣 谢红云 沈珮 黄璐 胡宁 |
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| 作者单位： | 北京工业大学,电子信息与控制工程学院,北京,100124 |
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| 基金项目： | 国家自然科学基金项目，北京市优秀跨世纪人才基金项目，北京市教委科技发展计划项目，北京市自然科学基金项目，北京市属市管高校中青年骨干教师培养计划项目(102 |
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| 摘 要： | 基于Jazz 0.35 μm SiGe工艺,设计了一款工作在3～10 GHz频带范围内的超宽带低噪声放大器.该放大器采用电阻负反馈结构,并在发射极并联电容,以补偿晶体管高频增益的下降.仿真结果显示,在整个工作频带内,放大器的增益在22.3 dB以上,平坦度保持在1 dB以内,噪声系数在3.7 dB到4.6 dB之间,输入输出反射系数(S_(11)及S_(22))均在-12 dB以下.整个设计最大的优点是没有用到片上电感,使得芯片面积大大缩小,对于商业应用具有极大的吸引力.
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| 关 键 词： | 超宽带 低噪声放大器 电阻负反馈 |
Design of an Inductorless Ultra-Wideband Low Noise Amplifier |
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| HUANG Yiwen,ZHANG Wanrong,XIE Hongyun,SHEN Pei,HUANG Lu,HU Ning.Design of an Inductorless Ultra-Wideband Low Noise Amplifier[J].Microelectronics,2009,39(6). |
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| Authors: | HUANG Yiwen ZHANG Wanrong XIE Hongyun SHEN Pei HUANG Lu HU Ning |
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| Abstract: | An ultra-wideband low noise amplifier (LNA) operating in 3-10 GHz frequency range was presented based on JAZZ 0.35 μm SiGe technology.Using multiple resistive negative feedback structure, the LNA was connected in parallel with capacitors, in order to compensate the gain falling at higher frequency.Simulation results showed that, at the entire frequency band, the LNA had a gain above 22.3 dB with less than 1 dB variation, and its noise figure varied between 2.4 dB to 3.3 dB, and both input and output reflections (S_(11) and S_(22)) were below -12 dB.The inductor-free design greatly reduces the chip size,which has great potential in commercial applications. |
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| Keywords: | SiGe HBT Ultra-wide band Low noise amplifier Resistive negative feedback SiGe HBT |
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