A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration |
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Authors: | Yu. V. Aristov V. B. Voronkov I. V. Grekhov A. K. Kozlov S. V. Korotkov A. G. Lyublinskii |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russia |
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Abstract: | The results of studies of new fast-acting semiconductor devices—deep-level dynistors intended for use in high-power devices of nano-and microsecond pulsed-power technology—are presented. The possibility of switching multikiloampere current pulses having a rise rate of 200 kA/μs with the use of a single device with a 12-mm-diameter structure is shown. A high-power switch based on an assembly of dynistors with an operating voltage of 12 kV connected in series is described. The switch is capable of switching current pulses with a 1200-A amplitude and a 4-ns rise time. |
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