| 掺钨二氧化钒薄膜的制备与分析 |
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| 引用本文： | 刘向,崔敬忠,梁耀廷,李智. 掺钨二氧化钒薄膜的制备与分析[J]. 真空与低温, 2004, 10(2): 85-88 |
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| 作者姓名： | 刘向 崔敬忠 梁耀廷 李智 |
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| 作者单位： | 兰州物理研究所,甘肃,兰州,730000 |
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| 摘 要： | 通过凋研国内外的各种制备方法,比较它们的优缺点后,选用磁控溅射法.在硅片上得到了电阻变化2个数量级的二氧化钒(VO2)薄膜.对薄膜进行电学性能的测试,结果表明:掺钨后二氧化钒薄膜的相变温度比纯的二氧化钒薄膜相变温度有所降低,掺钨后薄膜的近红外透射率也随之减小.通过X射线衍射和X射线光电子谱对薄膜的微观结构和组分进行了分析.
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| 关 键 词： | 磁控溅射 相变 二氧化钒 薄膜 |
| 文章编号： | 1006-7086(2004)02-0085-04 |
| 修稿时间： | 2004-01-13 |
PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS |
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| LIU Xiang,CUI Jing-zhong,LIANG Yao-ting,LI Zhi. PREPARATION AND ANALYSIS ON W-DOPED VANADIUM DIOXIDE THIN FILMS[J]. Vacuum and Cryogenics, 2004, 10(2): 85-88 |
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| Authors: | LIU Xiang CUI Jing-zhong LIANG Yao-ting LI Zhi |
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| Abstract: | The magnetron sputtering method was used for preparation of the W doped VO_2 thin films. VO_2 thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate. Thin films electric property have been studied. The results indicate that the phase transition temperature of V_(1-X)W_(X)O_2 depressed compared with VO_2 . Its IR transmittance decreased too. The micro structures and compositions of the films are studied by XRD and XPS. |
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| Keywords: | magnetron sputtering phase transition Vanadium dioxide thin film |
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