不同调制周期Cu/TaN多层膜的微结构与表面形貌

采用磁控溅射方法在Si(111)基底上沉积不同调制周期的Cu/TaN多层膜,用X射线衍射仪(XRD)与原子力显微镜(AFM)表征薄膜微结构与表面形貌,研究了不同调制周期L薄膜的微结构与表面形貌.结果表明:不同L的TaN调制层均为非晶结构,多晶Cu调制层的晶粒取向组成随着L改变而变化; Cu调制层的表面粗糙度Rrms.大于TaN调制层的Rrms;与Cu单层膜相比,最外层为Cu调制层的Cu/TaN多层膜的Rrms较小;与TaN单层膜相比,最外层为TaN调制层的Cu/TaN多层膜的/Rrms较大;随着L增加,多层膜与对应的单层膜之间的兄Rrms差值逐渐减小.

Microstructure and surface morphology of Cu/TaN multilayer films with different modulation periods

Cu/TaN multilayer films with different modulation periods were deposited on Si substrates by magnetron sputtering method. The film microstructure and surface morphology were investigated by X-ray diffraction (XRD) measurement and atomic force microscopy (AFM) respectively. The result shows that amorphous TaN sublayer and polycrystalline Cu sublayer were obtained. With increasing modulation period L, the texture coefficient T111 of Cu(111) plane decreases. The surface roughness Rrms of Cu/TaN multilayer films with Cu top layer is less than that of Cu single layer film. The Rrms of Cu/TaN multilayer films with TaN top layer is larger than that of TaN single layer film. With increasing L, the Rrms difference between multilayer films and the single layer films decreases.