Texture investigation of copper interconnects with a different line width |
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Authors: | J -Y Cho K Mirpuri D N Lee J -K An J A Szpunar |
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Affiliation: | (1) Department of Mining, Metals and Materials Engineering, McGill University, H3A 2B2 Montreal, PQ, Canada;(2) School of Materials Science and Engineering, College of Engineering, Seoul National University, 151-744 Seoul, Korea |
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Abstract: | To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects
samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed
in all investigated lines. Scattered {111}〈112〉 and {111}〈110〉 texture components are present in 0.18-μm-width interconnect
lines, and the {111}〈110〉 texture was developed in 2-μm-width interconnect lines. The directional changes of the (111) plane
orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution
(GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated
that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider
line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation
of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth
mechanisms of Cu deposits. |
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Keywords: | Cu interconnects damascene texture stress orientation imaging microscope (OIM) |
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