| 基于自隔离技术的可集成SOI高压功率器件新结构 |
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| 引用本文： | 高唤梅,罗小蓉,张伟,邓浩,雷天飞. 基于自隔离技术的可集成SOI高压功率器件新结构[J]. 半导体学报, 2010, 31(8): 084012-6 |
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| 作者姓名： | 高唤梅 罗小蓉 张伟 邓浩 雷天飞 |
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| 基金项目： | This work is supported by the projects of NO. JPPT-115-2-1059, the National Natural Science Foundation of China (NO. 60806025 and NO. 60976060). |
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| 摘 要： | SOI功率器件的高耐压和高、低压间良好的隔离效果是SOI高压功率集成电路（SOI HVIC）的两项关键技术。本文提出在埋氧层（buried oxide layer，BOX）上表面处埋N岛 (buried n-islands，BNI) 的SOI LDMOS高压功率器件新结构，该结构采用自隔离技术使SOI HPIC中高压功率器件与低压控制电路单元之间达到理想的隔离效果。此外，N岛中的施主离子和位于耗尽N岛间的空穴使BOX层的电场强度从32V/μm增加到113V/μm，同时对漂移区表面电场分布进行调制，最终使器件击穿电压（BV）显著提高。实验测得一个BNI SOI LDMOS样品的耐压为673V，并在SOI HVPIC中表现出良好的隔离特性。
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| 关 键 词： | 高压集成电路 功率器件 SOI 隔离技术 LDMOS器件 基础 电场分布 HVIC |
| 修稿时间： | 2010-03-29 |
A new integrated SOI power device based on self-isolation technology |
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| Gao Huanmei,Luo Xiaorong,Zhang Wei,Deng Hao and Lei Tianfei. A new integrated SOI power device based on self-isolation technology[J]. Chinese Journal of Semiconductors, 2010, 31(8): 084012-6 |
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| Authors: | Gao Huanmei Luo Xiaorong Zhang Wei Deng Hao Lei Tianfei |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | |
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| Keywords: | buried n-islands self-isolation breakdown voltage electric field SOI oindent |
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