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Structural, dielectric and optical properties of Ba(Ti, Zr)O3 thin films prepared by chemical solution deposition |
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| Authors: | X. G. Tang H. L. W. Chan A. L. Ding |
| Affiliation: | a Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China b Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China |
| Abstract: | Ba(Ti0.95Zr0.05)O3 (BTZ) thin films grown on Pt/Ti/SiO2/Si(100) substrates were prepared by chemical solution deposition. The structure and surface morphology of BTZ thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). At 100 kHz, the dielectric constant and dissipation factor of the BTZ film are 121 and 0.016, respectively. The ellipsometric spectrum of the BTZ thin film annealed at 730 °C was measured in the range of wavelength from 355 to 1700 nm. Assuming a five-layer model (air/surface roughness layer/BTZ/interface layer/Pt) for the BTZ thin films on platinized silicon substrates, the optical constant spectra (refractive index n and the extinction coefficient k) of the BTZ thin films were obtained. |
| Keywords: | BTZ thin films Dielectric properties Optical properties Ellipsometry |
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