| 用等离子体浸没氦离子注入实现智能剥离 |
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| 引用本文： | 闵靖,吴晓虹,邹子英.用等离子体浸没氦离子注入实现智能剥离[J].半导体技术,2000(5). |
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| 作者姓名： | 闵靖 吴晓虹 邹子英 |
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| 作者单位： | 上海市计量测试技术研究院!上海，200233 |
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| 摘 要： | 报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。氦离子用等离子体浸没离子注入技术注入硅片中。
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| 关 键 词： | 绝缘体上单晶硅膜 注氧隔离 硅片键合 智能剥离 顶层硅 埋入SiO_2 |
Smart Cut Using Plasma Immersion Helium Ion Implantation Technology |
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| Min Jing, Wu Xiaohong, Zou Ziying.Smart Cut Using Plasma Immersion Helium Ion Implantation Technology[J].Semiconductor Technology,2000(5). |
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| Authors: | Min Jing Wu Xiaohong Zou Ziying |
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| Abstract: | A new technology of smart cut using helium ion implantation to form SOI was presented.The process of smart cut was introduced and research results was demonstrated by means of XTEM in this paper. Helium ion was implanted by plasma immersion ion implantation technology. |
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| Keywords: | SOI SIMOX Wafer bonding Smart cut Top silicon Buried SiO_2 |
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