| 浮栅存储器的单粒子辐射效应研究进展 |
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| 引用本文： | 刘张李,邹世昌,张正选,毕大炜,胡志远,俞文杰,陈明,王茹. 浮栅存储器的单粒子辐射效应研究进展[J]. 功能材料与器件学报, 2010, 16(5) |
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| 作者姓名： | 刘张李 邹世昌 张正选 毕大炜 胡志远 俞文杰 陈明 王茹 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所/信息功能材料国家重点实验室,上海,200050;中国科学院研究生院,北京100049;中国科学院上海微系统与信息技术研究所/信息功能材料国家重点实验室,上海,200050 |
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| 摘 要： | 综述了浮栅存储器的单粒子效应国外研究进展,对浮栅存储器控制电路及存储单元的单粒子效应进行详细分析和讨论。指出控制电路是浮栅存储器单粒子效应的关键部件以及重离子轰击使浮栅存储器数据保持特性退化;阐述了浮栅存储单元辐射后可能的电荷损失机制。最后指出纳米晶浮栅存储器具有好的抗辐射能力。
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| 关 键 词： | 控制电路 存储单元 单粒子效应 电荷损失 |
Single event effect in floating gate memories |
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| LIU Zhang-li,ZOU Shi-chang,ZHANG Zheng-xuan,BI Da-wei,HU Zhi-yuan,YU Wen-jie,CHEN Ming,WANG Ru. Single event effect in floating gate memories[J]. Journal of Functional Materials and Devices, 2010, 16(5) |
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| Authors: | LIU Zhang-li ZOU Shi-chang ZHANG Zheng-xuan BI Da-wei HU Zhi-yuan YU Wen-jie CHEN Ming WANG Ru |
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| Affiliation: | LIU Zhang-li1,2,ZOU Shi-chang1,ZHANG Zheng-xuan1,BI Da-wei1,HU Zhi-yuan1,YU Wen-jie1,CHEN Ming1,WANG Ru1,2(1.Shanghai Institute of Microsystem and Information Technology of Chinese Academy of Sciences/State Key Lab of Functional Materials,Shanghai 200050,China,2.Graduate University of Chinese Academy of Sciences,Beijing 100049,China) |
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| Abstract: | Single event effect(SEE) in floating gate memories are reviewed.SEE in the control circuit and the memory cell are analyzed and discussed in detail.This paper points out that the control circuit is the key part in the memory's radiation effect and the heavy ions' irradiation degrade the data retention characteristics of the floating gate memories.The possible mechanism of charge loss in memory cell after radiation is discussed.Finally,it is pointed out that nanocrystal memories have good tolerance to heavy ... |
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| Keywords: | control circuit memory cell single event effect(SEE) charge loss |
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