Investigations on thiourea content in ternary Sn–Ag–Cu bath using electrochemical studies |
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Authors: | Shany Joseph Girish J Phatak |
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Affiliation: | (1) Electronic Packaging Group, Centre for Materials for Electronic Technology (C-MET), Panchwati, Off Pashan Road, Pune, 411 008, India; |
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Abstract: | We have developed a methane sulfonic acid (MSA) based ternary electrolytic bath for co-deposition of the eutectic Sn–Ag–Cu
films. The bath contains thiourea (TU), which functioned as an effective chelating agent in controlling the bath stability
as well as the elemental and microstructural properties of the deposited film. A study of the bath behaviour at TU concentrations
in the range 0.06–0.2 M is undertaken with the help of elemental and microstructure analysis, cyclic voltammetry (CV) and
impedance analysis. The deposited films have close to eutectic composition with slightly higher Cu content for all the TU
concentrations. On the other hand, the microstructure is found to be increasingly refined with increasing TU content. The
CV and impedance analysis confirm chelation of Ag and Cu with TU and absence of such chelation with Sn ions. It also indicates
close deposition potentials for each metal ion. Impedance analysis specifically reveals presence of an adsorbed insulating
film on cathode surface, contributed by MSA or water. It also reveals competitive deposition between the insulating film and
metal ions. |
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Keywords: | |
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