Structurally perfect silicon layers produced on sapphire by oxygen ion implantation |
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| Authors: | V. M. Vorotyntsev E. L. Shobolov V. A. Gerasimov |
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| Affiliation: | (1) School of Electronics, Electrical Engineering and Computer Science, The Queen’s University of Belfast, Belfast, BT9 5AH N, Ireland |
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| Abstract: | We demonstrate that the structural perfection of silicon layers on sapphire can be improved through high-temperature solid-state recrystallization after preamorphization of the most imperfect silicon layer near the silicon/sapphire interface by high-energy oxygen ions, followed by high-temperature recrystallization in an inert atmosphere. |
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