Annealing and photobleaching effects on the absorption spectra of gamma-irradiated BaFI crystals

We have studied processes induced in gamma-irradiated BaFI crystals by illumination and thermal annealing and identified defect centers responsible for the observed absorption bands. We assign the 205-nm absorption band to α(F⁻) centers, the 230-nm band to α(I⁻) centers, the 270-nm band to F_i ⁰ centers, the 370-nm band to I_i⁰ centers, the bands around 480 nm to F(F⁻) centers, and the 610-nm band to F(I⁻) centers. The proposed assignment accounts well for the radiation-induced processes identified in the crystals.