Performance and materials aspects of Ge:Be photoconductors |
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| Authors: | N M Haegel E E Haller P N Luke |
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| Affiliation: | 1. Lawrence Berkeley Laboratory, University of California, 94720, Berkeley, California, USA
2. Department of Materials Science and Mineral Engineering, University of California, 94720, Berkeley, California, USA
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| Abstract: | Ge:Be photoconductors have been developed for low photon background applications in the 30–50 μm wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Berylliumdoped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of ～ 10?6 torr. We report an optimum detective quantum efficiency of 46% at a background flux of 1.5×108 photons/second (7×10?13 W). Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors. |
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