目标红外辐射控制技术研究

目标的红外辐射强度是由目标表面温度和目标表面发射率两个因素决定的。本文介绍了电致变发射率和半导体电致变温的基本原理和器件结构，具体分析了晶态氧化钨薄膜、聚苯胺薄膜和半导体等作为电致变发射率材料的特点，提出了一种目标红外辐射控制系统原理，为实现目标红外辐射与背景红外辐射的融合、降低目标的可检测性理清了思路。

IR Radiation Control of Military Target

The IR radiation intensity of target depends on the temperature and the IR emissivity of it. The principle and the structure of temperature control device and semiconductor IR emissivity control device are introduced. The characteristics of crystalline WO3 thin film, polyanilin thin film and semiconductor using IR emissivity control material are analysed. In the paper,we give a framework of IR radiation control system,which aim at achieving the inosculation of the IR radiation of target and that of the background so as to reduce the detect poasibility of target.