Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications |
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| Authors: | S. Chatterjee S. K. Samanta H. D. Banerjee C. K. Maiti |
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| Affiliation: | (1) Department of Electronics & ECE, Indian Institute of Technology, 721 302 Kharagpur, India;(2) Materials Science Centre, Indian Institute of Technology, 721 302 Kharagpur, India |
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| Abstract: | ZrO 2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO 2 films. The films showed their suitability for microelectronic applications. |
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| Keywords: | Zirconium dioxide high-k PECVD EOT |
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