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PIN型非晶硅薄膜太阳电池仿真研究
引用本文:曾睿,何世东,龚宇光,严来军,李伟. PIN型非晶硅薄膜太阳电池仿真研究[J]. 半导体光电, 2010, 31(3)
作者姓名:曾睿  何世东  龚宇光  严来军  李伟
作者单位:电子科技大学,光电信息学院,成都,610054;电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054
摘    要:运用AMPS软件,对TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/metal型非晶硅薄膜太阳电池进行了仿真研究,重点模拟和分析了电池性能参数随i层和n层厚度变化的规律.结果表明,为了获得电池转换效率和短路电流密度的最大值,n 层非晶硅薄膜应尽可能地减小厚度,而i层非晶硅薄膜厚度最好控制在500~700 nm范围内.

关 键 词:薄膜太阳电池  非晶硅  计算机仿真  转换效率

Simulation of PIN Solar Cells Based on Hydrogenated Amorphous Silicon Thin Films
ZENG Rui,HE Shidong,GONG Yuguang,YAN Laijun,LI Wei. Simulation of PIN Solar Cells Based on Hydrogenated Amorphous Silicon Thin Films[J]. Semiconductor Optoelectronics, 2010, 31(3)
Authors:ZENG Rui  HE Shidong  GONG Yuguang  YAN Laijun  LI Wei
Affiliation:ZENG Rui1,HE Shidong1,GONG Yuguang1,YAN Laijun1,LI Wei 2(1. School of Optoelectronic Information,2. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,CHN)
Abstract:The performance of thin-film solar cells based on hydrogenated amorphous silicon materials was simulated with AMPS-1D (Analysis of Microelectronic and Photonic Structures-1D) software,and especially the relation between the properties of the solar cells and thickness of i-layer or n-layer were analyzed and discussed. The simulation results show that it is better to cut down the thickness of n-layer so that the best efficiency and short-circuit current density could be obtained when the thickness of i-layer ...
Keywords:solar cells  a-Si:H thin film  numerical simulation  conversion efficiency  
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