| 电解液浓度对双槽法腐蚀多孔硅的影响 |
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| 引用本文： | 钟福如,吕小毅,贾振红,黄晓辉. 电解液浓度对双槽法腐蚀多孔硅的影响[J]. 半导体光电, 2010, 31(4) |
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| 作者姓名： | 钟福如 吕小毅 贾振红 黄晓辉 |
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| 作者单位： | 新疆大学,信息科学与工程学院,乌鲁木齐,830046;石河子大学,信息科学与技术学院,新疆,石河子,832003;西安交通大学,电子与信息工程学院,西安,710049;新疆大学,信息科学与工程学院,乌鲁木齐,830046 |
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| 基金项目： | 国家自然科学基金项目，教育部新世纪优秀人才支持计划项目，新疆维吾尔自治区高校科学研究计划项目 |
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| 摘 要： | 设计了一种电化学双槽腐蚀装置,研究了不同电解液的浓度对制备多孔硅形貌和光学特性的影响.研究结果表明采用此装置制备的多孔硅孔洞均匀性好,并且随NaCl电解液浓度的增加,制备的多孔硅孔径呈减小的趋势,发光强度有所增强.
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| 关 键 词： | 多孔硅 NaCl电解液 光致发光 |
Effect of NaCl Solution on Porous Silicon Etched by Double-cell Electrochemistry |
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| ZHONG Furu,LV Xiaoyi,JIA Zhenhong,HUANG Xiaohui. Effect of NaCl Solution on Porous Silicon Etched by Double-cell Electrochemistry[J]. Semiconductor Optoelectronics, 2010, 31(4) |
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| Authors: | ZHONG Furu LV Xiaoyi JIA Zhenhong HUANG Xiaohui |
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| Affiliation: | ZHONG Furu1,2,LV Xiaoyi 3,JIA Zhenhong1,HUANG Xiaohui 1(1.College of Information Science and Engineering,Xinjiang university,Urumqi 830046,CHN,2.College of Information Science and Technology,Shihezi University,Shihezi 832003,3.School of Electronic and Information Engineer,Xi'an Jiaotong University,Xi'an 710049,CHN) |
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| Abstract: | Porous silicon(PS)are prepared by double-cell electrochemistry etching with different NaCl solution concentrations.The effects of the NaCl solution concentrations were investigated.The PS surface were characterized by Scanning Electron Microscope(SEM).The results show that the porous silicon obtained by this method has good uniformity,and its aperture decreases and its luminescence will be enhanced as the concentration of NaCl solution increases. |
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| Keywords: | porous silicon NaCl solution photoluminescence |
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