功率变换器去耦电容参数选择与过电压预测 |
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引用本文: | 肖芳,戈宝军,陶大军.功率变换器去耦电容参数选择与过电压预测[J].电机与控制学报,2016(5):14-22. |
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作者姓名: | 肖芳 戈宝军 陶大军 |
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作者单位: | 哈尔滨理工大学电气与电子工程学院,黑龙江哈尔滨,150080 |
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基金项目: | 中国博士后科学基金(2015M571427) |
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摘 要: | 功率变换器在高速开通与关断的过程中产生的电磁干扰影响系统的正常运行,提出一种基于绝缘栅双极晶体管(insulated-gate bipolar transistor,IGBT)开关模块的功率变换器电磁干扰(electromagnetic interference,EMI)噪声源建模方法,可以精确的预测整个传导干扰频段内的EMI噪声。分析去耦电容对电路的影响,基于IGBT模块等效电磁干扰噪声源模型来预测功率变换器产生的过电压,通过对过电压的分析选择去耦电容的参数,整个分析体现如何应用该模型进行参数选择的过程。最后,仿真和实验表明参数选择的正确性。
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关 键 词: | 绝缘栅双极晶体管开关模块 电磁干扰 预测 过电压 去耦电容 参数选择 |
Decoupling capacitance selecting and over-voltage predicting for power converter system |
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Abstract: | Severe electromagnetic interference ( EMI) is generated due to the high on and off accompan -ying the high speed switching.A new frequency-domain modular modeling approach was proposed for pre -dicting conducted electromagnetic interference based on insulated-gate bipolar transistor ( IGBT) switching module in power converter system.The modular modeling approach can predict the electromagnetic interfer-ence noise accurately in a power converter for the entire conducted electromagnetic interference frequency range.Based on the model,the effect of decoupling capacitance was analyzed.The over-voltage was predic-ted by using the modular equivalent source model.The whole analysis was demonstrated how to select de-vice.The validity of the device selection was verified by simulation and experimental results at last. |
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Keywords: | insulated-gate bipolar transistor switching module conducted electromagnetic interference prediction over voltage decoupling capacitor parametric study |
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