| O3有效钝化多孔硅的研究 |
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| 引用本文： | 黄燕华,陈松岩,江炳熙.O3有效钝化多孔硅的研究[J].光电子．激光,2006,17(4):450-454. |
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| 作者姓名： | 黄燕华 陈松岩 江炳熙 |
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| 作者单位： | 厦门大学物理系,福建,厦门,361005 |
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| 摘 要： | 开发了用O3氧化钝化多孔Si（PS）的实用工艺方法。O3的基本作用是对Si-Hx和Si悬挂键（DB）的充分氧化，经过随后158d贮存的老化实验，得到了表面Si—H，键完全被Si-O3膜和Si-烷基膜所替代并覆盖的PS，其光致发光（PL）强度达到稳定的增强，这归因于PS纳米晶粒的表面势垒高度的提高以及量子效率的提高。
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| 关 键 词： | 多孔Si(PS) 光致发光(PL) 臭氧处理(OT) 傅立叶变换红外吸收谱(FTIR) |
| 文章编号： | 1005-0086（2006）04-0450-05 |
| 收稿时间： | 2005-01-26 |
| 修稿时间： | 2005-01-262006-02-15 |
Investigation of an Effective Passivation Method for Porous Silicon with the Aid of Ozone Molecules |
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| HUANG Yan-hu,CHEN Song-yan,JIANG Bing-xi.Investigation of an Effective Passivation Method for Porous Silicon with the Aid of Ozone Molecules[J].Journal of Optoelectronics·laser,2006,17(4):450-454. |
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| Authors: | HUANG Yan-hu CHEN Song-yan JIANG Bing-xi |
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| Affiliation: | Department of Physics, Xiamen University, Xiamen 361005, China |
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| Abstract: | A practical oxidizing technique with O_3 has been developed for the passivation of porous silicon(PS).The fundamental role of ozonization may be attributed to the strong oxidizing process of the SiH_x species and dangling bonds(DB).The subsequent 158 d aging effect with the presence of absorbed O_3 molecules is much effective for the oxidizing process.At last we achieve a complete replacement of Si-H_x covered with Si-O_x film and Si-alkyl film.The steady increase of photoluminescence(PL) intensity is due to the increase in barrier's height efficiency and the increase in quantum efficiency for the nano-crystallites. |
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| Keywords: | porous silicon(PS) photoluminescence(PL) ozone treatment(OT) Fourier transform infrared spectroscopy(FTIR) |
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