Vertical integration of a GaAs/AlGaAs quantum-well laser and along-wavelength quantum-well infra-red photodetector |
| |
Authors: | Tsang J.S. Lee C.P. Tsai K.L. Chen H.R. |
| |
Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
| |
Abstract: | A short-wavelength (~0.8 μm) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (~8 μm) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20 μm. The quantum-well detector has a peak response at 8 μm and a responsivity of 0.7 A/W |
| |
Keywords: | |
|