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大直径单晶生长中稳定真空度和优化气流控制的改进措施
引用本文:蒋科坚,许真知.大直径单晶生长中稳定真空度和优化气流控制的改进措施[J].半导体技术,2004,29(2):1-3.
作者姓名:蒋科坚  许真知
作者单位:浙江大学杭州海纳半导体有限公司,浙江,杭州,310027;浙江大学杭州海纳半导体有限公司,浙江,杭州,310027
摘    要:随着国内大直径直拉单晶技术的发展,一些原先在小直径单晶中并未引起重视的问题,对大直径单晶生长的负面影响日渐显现.大直径单晶对其生长环境有很高的稳定性要求.本文就其中真空度的稳定和气流控制的优化两个方面,提出了改进方案,以提高大直径单晶生长的成晶率和内在品质.

关 键 词:直拉法  大直径单晶  真空稳定性  气流控制
文章编号:1003-353(2004)02-0001-03

The innovative methods for the vacuum stabilized and the gas flow optimized in major diameter crystal growing
JIANG Kej-ian,XU Zhen-zhi.The innovative methods for the vacuum stabilized and the gas flow optimized in major diameter crystal growing[J].Semiconductor Technology,2004,29(2):1-3.
Authors:JIANG Kej-ian  XU Zhen-zhi
Abstract:With the development of the Czohralski technology for major diameter crystal in China,recently there is an increasing concern over the negative effects on major diameter crystal growing,which were formerly neglected in minor diameter crystal. The growing of major diameter crystal needsextremely stabilized circumstance. This article introduces the innovative methods in two aspects of it,which consist of the vacuum stabilized and the gas flow optimized, to improve the manufacture effi-ciency and the inner quality in major diameter crystal growing
Keywords:Czhralski  major diameter crystal  vacuum stabilized  gas flow optimized  
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