针对新型HfO2栅介质改进的四元件电路模型

针对超薄HfO₂栅介质MOS电容，提出改进的四元件小信号等效电路模型，修正了双频C-V法，增加了串联寄生电阻和串联电感两个参数．结合双频测量结果计算出修正的C-V曲线，消除了高频时的频率色散现象，而且曲线更加接近理想C-V曲线．通过实验结果提取了寄生参数值并拟合出各元件值与MOS电容面积和反型层厚度的解析表达式．实验测量和理论计算表明该方法可提高通常C-V法的测量精度．

Improved two-frequency method with the four-element circuit model for the novel HfO_2 as the gate dielectric

For the MOS capacitance with the ultra thin hafnium oxide,an equivalent four-element circuit model including the additional series resistance and series inductance is proposed to be employed in the two-frequency C-V correction.These extracted parameters by independently measuring the capacitor at two different frequencies eliminate the frequency dispersion at high frequencies.The corrected C-V curves agree with the theoretical calculation very well.The parameters are extracted,and the relationships between ...