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Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices |
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| Authors: | A Yu Nikiforov P K Skorobogatov A I Chumakov A V Kirgizova A G Petrov P P Kutsko A V Kuzmin A A Borisov V A Telets V T Punin V S Figurov |
| Affiliation: | 1. Special-Purpose Electronic Systems (Experimental Research and Production Association), Moscow, Russia 2. Agency for Development of Electronic Component Base, Moscow, Russia 3. 22 Central Research Institute of Defense Ministry of (Federal State Institution), Moscow, Russia 4. Institute of Nuclear and Radiation Physics, Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics (Federal State Unitary Enterprise), Moscow, Russia 5. Research Institute of Devices (Federal State Unitary Enterprise), Moscow, Russia |
| Abstract: | Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate. |
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