Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage |
| |
| Authors: | H. Kraus M. Gutsche P. Hettl J. Jochum B. Kemmather |
| |
| Affiliation: | (1) University of Oxford, Nuclear and Astrophysics Laboratory, Keble Road, OX1 3RH Oxford, UK;(2) DRAM Development Program, Siemens Components, Inc., 1580 Route 52, ZIP 33A, Hopewell Junction, 12533 New York;(3) Physik Department E15, Technische Universität München, JamesFranck-Strasse, D-85748 Garching, Germany;(4) University of California at Berkeley, 301 LeConte Hall, 94720 Berkeley, California;(5) Centre d'Etudes de Saclay CEA-SPEC, 91191 Gif-Sur-Yvette Cedex, France |
| |
| Abstract: | Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions. |
| |
| Keywords: | SIS' junctions tunnel rate detectors |
| 本文献已被 SpringerLink 等数据库收录！ |
|
