应用于超薄栅氧化CMOS器件的两种电荷泵改进技术的比较

本文提出了High-low multi-frequency(HLMF)和Average bottom-top-pulse(ABTP)两种电荷泵改进技术,用于提高表征超薄栅氧化CMOS器件界面缺陷的精度.结果表明,在电荷泵技术测量过程中,这两种改进技术能非常有效地扣除漏电流.同时,也分析了电荷泵电流曲线的几个典型特性.由于ABTP技术是用静态模式测量漏电流,所以,在大的负Vbase端,电荷泵电流曲线的尾部出现大的波动.通过比较,我们发现HLMF具有更高的精度,可以作为用于提升表征超薄栅氧化CMOS器件界面缺陷精度的一种重要技术.

Comparison of two improved charge pumping techniques in ultrathin gate oxide CMOS devices

Improved high - low multi - frequency (HLMF) and average bottom - top - pulse (ABTP) CP techniques have been proposed for characterizing the interface traps in ultra -thin gate oxide CMOS devices. It is successfully demonstrated that these two improved CP techniques work fine to separate the leakage current from lop for MOSFETs. Moreover, the typical characteristics of the corrected Icp are dis cussed. Since the static mode is used to collect leakage in ABTP, the large noise of the corrected Icp tail at the lager negative Vbase emerges. From comparison, it is found that HLMF has higher precision than ABTP and can be regarded as the reference method for improving accuracy of CP in ultrathin gate oxide CMOS devices.