溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究

利用溶胶凝胶法在Al₂O ₃衬底上制备出了c轴择优取向的钼掺杂氧化锌（MZO）透明导电薄膜，研究了钼的掺杂量(0~1 at%)对钼掺杂氧化锌薄膜光电性能的影响。研究结果表明：所制备的薄膜为六方纤锌矿型结构且表面平整、致密，通过高温真空退火，MZO薄膜的电阻率明显降低，且随着钼含量的增加，MZO薄膜的电阻率呈现出先减小后增大的趋势，当钼含量为0.4at.%时，获得最小电阻率为0.13 Ωcm。薄膜在近红外区域(800~2000 nm)的平均透过率大于85%，这可以有效地拓宽光电器件的光谱范围。

Characterization of Mo-doped ZnO thin films prepared by sol-gel method

Mo-doped ZnO (MZO) films with different Mo concentration (0～1 at%) were prepared on Al2O3(0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mocontent and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at%. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (＞85%)in near-infrared region (800～2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.