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900 keV gold ion sputter etching of silicon and metals |
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| Authors: | Gary A. Glass Johnny F. Dias Alexander D. Dymnikov |
| Affiliation: | a Louisiana Accelerator Center/Physics Department, The University of Louisiana at Lafayette, P.O. Box 42410, Lafayette, LA 70504-2410, USA b Louisiana Accelerator Center, The University of Louisiana at Lafayette, P.O. Box 42410, Lafayette, LA 70504-2410, USA c Department of Physics, University of North Texas, P.O. Box 311427, Denton, TX 76203, USA |
| Abstract: | Au ions (900 keV) have been used to directly sputter etch microstructures in silicon, aluminum, copper and silver. The results presented clearly demonstrate that high energy heavy ions can be used to fabricate microstructures in selected metals and silicon in a single step process. |
| Keywords: | 81.05.Bx 81.05.Cy 81.65.Cf 85.85.+j |
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