Interface strain study of thin Lu2O3/Si using HRBS |
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Authors: | TK Chan CS Ho PS Lee |
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Affiliation: | a Centre for Ion Beam Applications, Department of Physics, Faculty of Science, National University of Singapore, Singapore 119260, Singapore b School of Material Science and Engineering, Nanyang Technological University of Singapore, Singapore 639798, Singapore |
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Abstract: | The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the 1 1 0] and 1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. |
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Keywords: | 68 49 &minus h 61 85 +p 68 55 aj |
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