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Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use |
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| Authors: | Wang Rong Liu Yunhong |
| Affiliation: | a Key Laboratory of Beam Technology and Materials Modification, Ministry of Education, Beijing Normal University, Beijing 100875, China b Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China c Beijing Radiation Center, Beijing 100875, China |
| Abstract: | GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 × 1010 cm−2 to 1 × 1013 cm−2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell. |
| Keywords: | 61.80.Jh 84.60.Jt |
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