Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films |
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Authors: | Sanju Rani N.K. Puri M.C. Bhatnagar |
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Affiliation: | a Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India b I.T.S. Engineering College, Greater Noida, India c Materials Research Institute, The Pennsylvania State University, University Park, 16802, USA d Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110075, India |
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Abstract: | Swift heavy ion irradiation has been successfully used to modify the structural, optical, and gas sensing properties of SnO2 thin films. The SnO2 thin films prepared by sol-gel process were irradiated with 75 MeV Ni+ beam at fluences ranging from 1 × 1011 ion/cm2 to 3 × 1013 ion/cm2. Structural characterization with glancing angle X-ray diffraction shows an enhancement of crystallinity and systematic change of stress in the SnO2 lattice up to a threshold value of 1 × 1013 ions/cm2, but decrease in crystallinity at highest fluence of 3 × 1013 ions/cm2. Microstructure investigation of the irradiated films by transmission electron microscopy supports the XRD observations. Optical properties studied by absorption and PL spectroscopies reveal a red shift of the band gap from 3.75 eV to 3.1 eV, and a broad yellow luminescence, respectively, with increase in ion fluence. Gas response of the irradiated SnO2 films shows increase of resistance on exposure to ammonia (NH3), indicating p-type conductivity resulting from ion irradiation. |
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Keywords: | 61.80.&minus x 82.45.Mp 81.40. Ef 78.55.&minus m 07.07.Df 61.72.Ji |
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