A study of cracking in GaN grown on silicon by molecular beam epitaxy |
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Authors: | R Jothilingam M W Koch J B Posthill G W Wicks |
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Affiliation: | (1) The Institute of Optics, University of Rochester, 14627 Rochester, NY;(2) Research Triangle Institute, 27709 Research Triangle Park, North Carolina |
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Abstract: | It is observed that GaN layers grown on silicon substrates often crack. The crack characteristics in hexagonal GaN films on
Si(111) has been characterized using scanning electron microscopy and Nomarski optical microscopy. The effects of growth temperature,
layer thickness, and V/III ratios on the cracking have been analyzed. The critical thickness for crack initiation was estimated
using a simple theoretical model and is shown to have good agreement with experimental results. Crack-free GaN on Si(111)
of thicknesses greater than one micron is possible by using low growth temperatures. |
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Keywords: | Gallium nitride molecular beam epitaxy silicon crystal morphology |
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