| SiO2/4H-SiC(0001)界面过渡区的ADXPS研究 |
| |
| 引用本文： | 王德君,赵亮,朱巧智,马继开,陈素华,王海波. SiO2/4H-SiC(0001)界面过渡区的ADXPS研究[J]. 半导体学报, 2008, 29(5): 944-949 |
| |
| 作者姓名： | 王德君 赵亮 朱巧智 马继开 陈素华 王海波 |
| |
| 作者单位： | 大连理工大学电子与信息工程学院,大连116024 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划) , 辽宁省自然科学基金 , 教育部跨世纪优秀人才培养计划 , 教育部留学回国人员科研启动基金 |
| |
| 摘 要： | 采用角依赖X射线光电子谱技术(ADXPS)对高温氧化SiO2/4H-SiC(0001)界面过渡区的组成、成分分布等进行了研究.通过控制1%浓度HF酸刻蚀氧化膜的时间,制备出超薄膜(1～1.5nm)样品,同时借助标准物对照分析,提高了谱峰分解的可靠性.结果显示,高温氧化形成的SiO2/4H-SiC(0001)界面,同时存在着Si1 ,Si2 ,Si33 3种低值氧化物,变角分析表明,一个分层模型适合于描述该过渡区的成分分布.建立了过渡区的原子级模型并计算了氧化膜厚度.结合过渡区各成分含量的变化及电容-电压(C-V)测试分析,揭示了过渡区成分与界面态的直接关系.
|
| 关 键 词： | SiO2/SiC界面 4H-SiC ADXPS 界面态 缺陷 |
| 文章编号： | 0253-4177(2008)05-0944-06 |
| 收稿时间： | 2007-10-08 |
| 修稿时间： | 2007-08-06 |
A Transition Region Study of SiO2/4H-SiC Interface by ADXPS |
| |
| Wang Dejun,Zhao Liang,Zhu Qiaozhi,Ma Jikai,Chen Suhua and Wang Haibo. A Transition Region Study of SiO2/4H-SiC Interface by ADXPS[J]. Chinese Journal of Semiconductors, 2008, 29(5): 944-949 |
| |
| Authors: | Wang Dejun Zhao Liang Zhu Qiaozhi Ma Jikai Chen Suhua Wang Haibo |
| |
| Affiliation: | School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China;School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China;School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China;School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China;School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China;School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China |
| |
| Abstract: | This article reports on the study of the transition region of a SiO2/4H-SiC interface prepared by dry oxidation using ADXPS.The study contains interface composition,component distribution and so on.We prepared the samples with oxidation thicknesses between 1nm and 1.5nm based on controlling the speed that the dilute HF acid etches SiO2 grown on SiC.The standard samples were adopted to assist in analysis.The results indicate that the SiO2/4H-SiC interface simultaneously contains Si1+,Si2+,and Si3+.The ADXPS ... |
| |
| Keywords: | SiO2/SiC interface 4H-SiC ADXPS interface state density defect |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
