| 绝缘体上硅FinFET亚阈值摆幅研究 |
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| 引用本文： | 刘兴,殷树娟,吴秋新. 绝缘体上硅FinFET亚阈值摆幅研究[J]. 微电子学, 2018, 48(6): 820-824, 829 |
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| 作者姓名： | 刘兴 殷树娟 吴秋新 |
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| 作者单位： | 北京信息科技大学 理学院, 北京 100192,北京信息科技大学 理学院, 北京 100192,北京信息科技大学 理学院, 北京 100192 |
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| 基金项目： | 国家自然科学基金资助项目(61604014)；北京市优秀人才培养青年骨干项目(2014000020124G103) |
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| 摘 要： | 在新型多栅器件栅电容模型的研究中,量子电容随着沟道长度及栅氧化层厚度的不断减小而变得越发不可忽略。推导了基于绝缘体上硅(SOI)工艺技术的鳍式场效应晶体管(FinFET)的量子电容,并通过构建囊括量子电容的内部电容网络模型推导了亚阈值摆幅。采用Matlab软件,仿真验证了量子电容对亚阈值摆幅的影响。提出了亚阈值摆幅的优化方法,为如何选取合适的器件尺寸来优化某个特定设计目标的性能提供了指导。
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| 关 键 词： | 绝缘体上硅鳍式场效应晶体管 量子电容 亚阈值摆幅 电容网络模型 |
| 收稿时间： | 2018-02-07 |
Study on the Subthreshold Swing of SOI-FinFET |
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| LIU Xing,YIN Shujuan and WU Qiuxin. Study on the Subthreshold Swing of SOI-FinFET[J]. Microelectronics, 2018, 48(6): 820-824, 829 |
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| Authors: | LIU Xing YIN Shujuan WU Qiuxin |
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| Affiliation: | College of Science, Beijing Information Science and Technology University, Beijing 100192, P. R. China,College of Science, Beijing Information Science and Technology University, Beijing 100192, P. R. China and College of Science, Beijing Information Science and Technology University, Beijing 100192, P. R. China |
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| Abstract: | In the study of gate capacitance models of non-classical transistors such as multi gate devices, the quantum capacitance decreased with the length of channel and the thickness of gate oxide layer, and it could not be ignored anymore. The quantum capacitance of Fin type field effect transistor based on SOI technology(SOI-FinFET) was deduced, and the subthreshold swing was deduced by building internal capacitance network model that involved quantum capacitance. The influence of the quantum capacitance on the subthreshold swing was verified by Matlab software. An optimization method of subthreshold swing was proposed, which provided guidance on how to select the appropriate device size to optimize the performance of a particular design target. |
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