掺杂型金属氧化物半导体材料的研究进展

金属氧化物是由金属阳离子和氧阴离子组成的一类离子型化合物,其金属正离子和氧负离子通过离子键合排布成各种不同的晶体结构而表现出独特的物理性质。然而,因其宽的能带间隙、低的光量子产率和光电转换效率、大的光生电子和空穴复合几率、低的气体响应速度、来自价带和导带消极的电子传递性能等缺陷限制了金属氧化物的应用潜力。综述了几种典型的掺杂型金属氧化物氧化锌、二氧化钛、三氧化二铁和稀土氧化物的研究进展,分析了金属掺杂对这几种典型金属氧化物在光、电、磁、传感性能方面的影响,并介绍了它们潜在的应用领域及研究现状,提出了未来的发展方向及需要关注的主题。

Research progress of doped metal oxide semiconductor materials

Metal oxides are a class of ionic compounds composed of metal cations and oxygen anions.The metal positive ions and oxygen negative ions are arranged into various crystal structures by ion bonding,showing unique physical properties.However,metal oxides are limited in potential application by their wide band gaps,low photon quantum yields and photoelectric conversion efficiencies,high probability of recombination of photo-generated electrons and holes,low gas response speed and negative effects of valence band and conduction band on the electron transfer performance.The research progress of several typical doped metal oxides,such as zinc oxide,titanium dioxide,iron oxide and rare earth oxides is reviewed.The effects of metal doping on the optical,electrical,magnetic and sensing properties of these typical metal oxides is analyzed and their potential application fields and research status are introduced.The future development direction and topics needing attention are put forward.