A fully integrated 24-dBm CMOS power amplifier for 802.11a WLAN applications |
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Authors: | YunSeong Eo KwangDu Lee |
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Affiliation: | Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea; |
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Abstract: | A fully integrated 24-dBm complementary metal oxide semiconductor (CMOS) power amplifier (PA) for 5-GHz WLAN applications is implemented using 0.18-/spl mu/m CMOS foundry process. It consists of differential three-stage amplifiers and fully integrated input/output matching circuits. The amplifier shows a P/sub 1/ of 21.8 dBm, power added efficiency of 13%, and gain of 21 dB, respectively. The saturated output power is above 24.1 dBm. This shows the highest output power among the reported 5-GHz CMOS PAs as well as completely satisfying IEEE 802.11a transmitter back off requirement. |
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