Dielectric and crystallization properties of massive amorphous selenium |
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| Authors: | M F Kotkata H A Khalek W M Atia T Porjesz M El-Samahy |
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| Affiliation: | (1) Physics Department, Ain Shams University, Cairo, Egypt;(2) Physics Department, Suez Canal University, Egypt;(3) Present address: Department for Low Temperature Physics, Roland Eötvös University, Budapest, Hungary |
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| Abstract: | The dielectric constant of amorphous selenium at 330kHz has been measured under vacuum as a function of time on different isothermsT
a. After a normal heating period, depending onT
a, the value of increases abruptly from 5.8 to a maximum (9.6 to 11) followed by a decrease to reach a constant value. The behaviour of the curves=f(t) is discussed in terms of the structural transformation in the amorphous matrix. The morphological changes during the spherulite growth of selenium are also discussed. The dielectric loss tan has been calculated during the crystallization stages using the mesurements of time-dependence of resistivityr(t). The crystallization kinetic parameters have also been computed from the variation of during the growth stage. A value of 1.2eV is obtained for the activation energy of the radial growth of selenium in the temperature range 90 to 140° C. |
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