| TiO2系压敏陶瓷施主掺杂研究 |
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| 引用本文： | 朱道云,周方桥,庄严.TiO2系压敏陶瓷施主掺杂研究[J].电子元件与材料,2006,25(2):28-30. |
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| 作者姓名： | 朱道云 周方桥 庄严 |
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| 作者单位： | 中山大学物理科学与工程技术学院,广东,广州,510275;广州大学物理与电子工程学院,广东,广州,510405;中国电子科技集团公司第七研究所,广东,广州,510310 |
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| 基金项目： | 广东省广州市教委科研项目 |
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| 摘 要： | 研究了Ta2O5和Nb2O5掺杂对TiO2系压敏陶瓷电性能的影响。采用电子陶瓷制备工艺,制备了两组TiO2系压敏陶瓷,借助热电子发射理论,分析了样品的I-V特性及介电频谱特性。结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5.03 V.mm–1)和最大的视在介电常数(εra=1.5×105)。
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| 关 键 词： | 电子技术 TiO2压敏陶瓷 压敏电压 非线性系数 视在介电常数 |
| 文章编号： | 1001-2028（2006）02-0028-03 |
| 收稿时间： | 2005-08-25 |
| 修稿时间： | 2005-08-25 |
Research on Donor Doping of TiO2-based Varistor Ceramics |
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| ZHU Dao-yun,ZHOU Fang-qiao,ZHUANG Yan.Research on Donor Doping of TiO2-based Varistor Ceramics[J].Electronic Components & Materials,2006,25(2):28-30. |
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| Authors: | ZHU Dao-yun ZHOU Fang-qiao ZHUANG Yan |
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| Abstract: | The influences of Ta2O5 and Nb2O5 on the electrical properties of TiO2-based varistor ceramics were studied.The TiO2-based varistor ceramics doped with donor Ta2O5 and Nb2O5 were prepared respectively by electric ceramic preparing technique.The main electrical properties such as I-V characteristic and dielectric spectra of these samples were analyzed and compared by thermal electron emitting mechanism.The results show that the sample doped with Ta2O5 exhibits the lowest breakdown voltage(E10mA = 5.03 V.mm–1) and the biggest apparent dielectric constant(εra=1.5×105). |
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| Keywords: | electronic technology TiO2 varistor ceramics breakdown voltage nonlinear coefficient apparent dielectric constant |
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