InAs/GaSb infrared photovoltaic detector at 77 K |
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| Authors: | Yang M.J. Bennett B.R. |
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| Affiliation: | Naval Res. Lab., Washington, DC; |
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| Abstract: | The characterisation of an 8 μm infrared photovoltaic detector based on InAs/GaSb superlattices is carried out at 77 K for the first time. The built-in field is established by the Fermi level difference between the superlattice surface and the InAs buffer layer. The photocurrent is from photoexcited carriers traversing through the superlattice conduction miniband. A current responsivity of 0.07 A/W has been obtained, implying that one out of 10 photoexcited electrons has been collected |
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