| Ag掺杂对Ge_2Sb_2Te_5结晶行为的影响 |
| |
| 引用本文： | 张滔,郑坤,张斌,邵瑞文,韩晓东,张泽.Ag掺杂对Ge_2Sb_2Te_5结晶行为的影响[J].电子显微学报,2014(1):1-6. |
| |
| 作者姓名： | 张滔 郑坤 张斌 邵瑞文 韩晓东 张泽 |
| |
| 作者单位： | [1]北京工业大学,固体微结构与性能研究所,北京100124 [2]浙江大学电镜中心,材料科学与工程学系,浙江杭州310027 |
| |
| 基金项目： | 国家重大科学研究计划（No.2013CBA01900）;国家自然科学基金重点资助项目（No.11234011）;全国优秀博士学位论文作者专项资金资助项目（No.201214）;北京市科技新星资助项目（No.Z121103002512017）. |
| |
| 摘 要： | 通过磁控溅射仪制备了Ge2Sb2Te5(GST)和Ag10.6(GST)89.4薄膜,利用X射线衍射(XRD)、电阻-温度(RT)测试、透射电子显微学以及径向分布函数(RDF)等方法对比研究了GST和Ag10.6(GST)89.4的结晶过程和微观结构及其演化的差异。发现掺Ag的薄膜非晶态、晶态电阻均比GST更高,而且结晶过程只有非晶相到面心立方相(fcc)的转变,没有出现GST的非晶到fcc再到六方相(hcp)的过程,XRD分析进一步证实了这一结果。同时,透射电镜原位加热实验证实了在300℃时,Ag10.6(GST)89.4仍然保持着fcc结构,而GST中已经出现了hcp相。通过统计230℃下时效处理的晶态薄膜的晶粒尺寸,发现Ag10.6(GST)89.4的平均晶粒尺寸小于Ge2Sb2Te5薄膜的,这可能是造成其晶态电阻高于GST的主要原因。
|
| 关 键 词： | Ag掺杂 GeSbTe 相变材料 磁控溅射 透射电镜 |
Crystallization behavior of phase change material Ge2 Sb2 Te5 doped with Ag |
| |
| ZHANG Tao,ZHENG Kun,ZHANG Bin,SHAO Ruiwen,HAN Xiaodong,ZHANG Ze.Crystallization behavior of phase change material Ge2 Sb2 Te5 doped with Ag[J].Journal of Chinese Electron Microscopy Society,2014(1):1-6. |
| |
| Authors: | ZHANG Tao ZHENG Kun ZHANG Bin SHAO Ruiwen HAN Xiaodong ZHANG Ze |
| |
| Affiliation: | 1. Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124; 2. Department of Materials Science, Zhejiang University, Hangzhou Zhejiang 310027, China) |
| |
| Abstract: | Ag-doped Ge2 Sb2 Te5 films have been prepared, and the influence of Ag doping on the crystallization behavior, structure was investigated through X-ray diffraction techniques, electrical resistivity measurement and in situ TEM annealing techniques. The results show that the addition of Ag into GST films could result in an enhancement in electrical resistance compared with Ge2 Sb2 Te5 films. Ag doping can lead to one-step crystallization process from amorphous to single face-centered cubic （ fcc ） phase without any other crystalline phase. HRTEM images show that the grain size in Ag-doped Ge2 Sb2 Te5 films is smaller than that in conventional Ge2 Sb2 Te5 films. |
| |
| Keywords: | GeSbTe Ag doping GeSbTe phase change materials magnetron sputtering transmission electron microscope |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
