High-gain lateral bipolar action in a MOSFET structure |
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Authors: | Verdonckt-Vandebroek S Wong SS Woo JCS Ko PK |
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Affiliation: | Sch. of Electr. Eng., Cornell Univ., Ithaca, NY ; |
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Abstract: | A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low collector current levels, lateral bipolar action with a current gain higher than 1000 is achieved. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. n-p-n BJTs with a 0.25-μm base width have been successfully fabricated in a p-well 0.25-μm bulk n-MOSFET process. The electrical characteristics of the n-MOSFET and the lateral n-p-n BJT at room and liquid nitrogen temperatures are reported |
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