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Computer simulation of the growth of heterostructure systems |
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| Authors: | M. Djafari Rouhani R. Malek S. Kersulis V. Mitin |
| Affiliation: | 1 Laboratoire d'Architecture et d'Analyse des Systemes-CNRS, 7 Avenue Colonel Roche, F-31077, Toulouse, France 2 Laboratoire de Physique des Solides, Université Paul Sabatier, 118 Route de Narbonne, F31062, Toulouse, France 3 Wayne State University, Department of Electrical and Computer Engineering, Detroit, MI 48202, USA |
| Abstract: | We have investigated the growth of heterostructures with high lattice mismatch and the growth of quantum wires on the top of ridges and through shadowing masks. Simulations are performed within a Monte Carlo scheme using tetrahedral lattice structure of semiconductor materials. It is shown that results of different simulations present similarities that we attribute to the primary role of kinetic effects as the driving force during epitaxial growth. The formation of 3D islands showing (111) facets, or (111) side walls when depositing through a shadowing mask, has been observed. The facets are of better quality than the top (001) surface because of the higher mobility of atoms on these facets. |
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